With the rapid development of silicon based process technology, it could be
predicted that silicon based integrated circuits will be practicable over
millimeter wave band and partially applicable in submillimeter or terahertz
band in recent years. In this paper, we will summarily review the recent
research advances in the State Key Laboratory of Millimeter Waves, including
various kind of CMOS based millimeter wave band active circuits in Q, V, W band,
and some submillimeter wave band passive components. These ICs have been achieved
under the support from National Basic Research Program (“973” Program) of China.