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MMIC amplifiers based on both high-electron mobility transistors (HEMTs) and
heterostructure bipolar transistors (HBT) have recently been demonstrated with
with useful levels of gain above 600 GHz. Developed under the DARPA Terahertz
Electronics Program, they are likely to power the components and subsystems of a
new generation of submm imaging radars, telecommunications systems, and spectrometers.
The author will describe NIST efforts to improve the accuracy of power, gain, and s-parameter
measurements on such components, from 100-700 GHz.
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