Invited Talk by Erich N. Grossman

Author: Erich Grossman; NIST, National Institute of Standards and Technology; Boulder, USA
Title of the Talk Metrology For THz Electronics
MMIC amplifiers based on both high-electron mobility transistors (HEMTs) and heterostructure bipolar transistors (HBT) have recently been demonstrated with with useful levels of gain above 600 GHz. Developed under the DARPA Terahertz Electronics Program, they are likely to power the components and subsystems of a new generation of submm imaging radars, telecommunications systems, and spectrometers. The author will describe NIST efforts to improve the accuracy of power, gain, and s-parameter measurements on such components, from 100-700 GHz.